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MoS2 transistors with 1-nanometer gate lengths
Demonstration of the shortest gate length transistor using a MoS2 channel and ~ 1 nm diameter single-walled carbon nanotube (SWCNT) gate.
Significance and Impact
~ 1 nm gate length transistor possible. Layered materials like MoS2 are potential channel materials at the sub-5-nm transistor scaling limit.
- Near ideal subthreshold swing ~65 mV/decade, On/Off current ratio ~106.
- Effective channel length of ~3.9 nm in Off state and ~1 nm in On state.
- MoS2 extension regions electrostatically doped n+ using Si back gate
S. B. Desai, S. R. Madhvapathy, A. B. Sachid, J. P. Llinas, Q. Wang, G. H. Ahn, G. Pitner, M. J. Kim, J. Bokor, C. Hu, H.-S. P. Wong, A. Javey, Science 354(6308) 99-102 (2016), DOI 10.1126/science.aah4698.