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October 2016

MoS2 transistors with 1-nanometer gate lengths


Scientific Achievement

Demonstration of the shortest gate length transistor using a MoS2 channel and ~ 1 nm diameter single-walled carbon nanotube (SWCNT) gate.

Significance and Impact

~ 1 nm gate length transistor possible. Layered materials like MoS2 are potential channel materials at the sub-5-nm transistor scaling limit.

Research Details


S. B. Desai, S. R. Madhvapathy, A. B. Sachid, J. P. Llinas, Q. Wang, G. H. Ahn, G. Pitner, M. J. Kim, J. Bokor, C. Hu, H.-S. P. Wong, A. Javey, Science 354(6308) 99-102 (2016), DOI 10.1126/science.aah4698.