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Phase-transition-induced p-n junction in single halide perovskite nanowire
Created a current-rectifying p-n heterojunction in single CsSnI3 nanowire via a localized phase transition from n-type yellow to p-type black phase and attributed the majority carrier type change to distinctly different formation energies of ionic vacancies in these two phases.
Significance and Impact
A novel approach to heterojunction formation and enables precise control over the design of functional heterostructures using halide perovskite building blocks.
- Identified dominant charge carriers of yellow and black phase CsSnI3 nanowires to be electrons (n-type) and holes (p-type), respectively, through Seebeck coefficient measurements.
- Characterized localized phase transition within single CsSnI3 nanowire using cathodoluminescence microscopy and the formed p-n heterojunction between yellow and black phases exhibiting electrical current rectification.
Q. Kong, W. Lee, M. Lai, C.G. Bischak, G. Gao, A.B. Wong, T. Lei, Y. Yu, L.-W. Wang, N.S. Ginsberg, P. Yang, PNAS (2018) DOI: 10.1073/pnas.1806515115