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Molecular Foundry

HIGHLIGHTSFerroelectricity in a semiconducting all-inorganic halide perovskite
March 15, 2022

Scientific Achievement

Fig. (A) Crystal structure of CsGeX3; (B) Charge density map of a CsGeBr3 unit cell; (C) Ferroelectric domain imaging by piezo-response force microscopy; (D) Ferroelectric hysteresis loops.   

Discovered a type of ferroelectric all-inorganic halide perovskite semiconductor and investigated the ferroelectric behaviors and visible light responses.

Significance and Impact

Study of this ferroelectric semiconductor will trigger new possibilities in developing previously underexplored multifunctional materials such as photoferroelectrics.

Research Details

  • Atomic displacement vector mapping, macroscopic polarization hysteresis loop and ab initio calculations established the existence of ferroelectricity in CsGeX3. The CsGeBr3 nanoplates displayed self-organized ferroelectric domains.
  • The investigated material was demonstrated to have visible light absorptions (with bandgaps of 1.6-3.3 eV) and show photoconductive property.

    Y. Zhang, E. Personnet, A. Fernandez, S. M. Griffin, H. Huyan, C.-K. Lin, T. Lei, J. Jin, E. S. Barnard, A. Raja, P. Behera, X. Pan, R. Ramesh, P. Yang, Science Advances, 2022, 8 (6), DOI: 10.1126/sciadv.abj5881

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