Scientific Achievement
Pathway to <100 mV voltages, < 1 ns switching times for candidate ferroelectrics for beyond-CMOS electronics
Significance and Impact
Such materials are being extensively studied for low-power electronics, but films were never as good as bulk. The current work changes this and is the first to achieve desired performance metrics for logic/memory devices
Research Details
- Synthesized films of some of the best BaTiO3 ever studied -> approaching properties of idealized single crystals
- Showed routes to produce switching voltages and times that make these materials viable for next-generation logic/ memory applications
- Revealed unexpected (and advantageous) thickness scaling -> making films in the 10-30 nm range viable for use
- Demonstrated first-pass integration on silicon wafers -> showing potential for scaling
