Thomas Swann 1×3 CCS MOCVD for III-V and Other Semi-Conducting Materials
Metal-Organic Chemical Vapor Deposition of films and nanowires of GaP, InP and their alloys. It has a single 3-inch susceptor pocket. With an expandable precursor bay, this system lends itself to more flexibility in materials and dopant options. Automated software control gives the ability to grow reproducible samples with timed precursor delivery for making precisely controlled heterostructures.
GRIFter for Carbon Nanotubes and Graphene
The graphene induction furnace or GRIFter enables the growth of high-quality graphene monolayers on SiC through high-temperature annealing up to 1700C.
