Thomas Swann 3×2 CCS MOCVD for Nitride Films and Nanowires
Metal-Organic Chemical Vapor Deposition of films and nanowires of GaN, InN, AlN and their alloys. It has 3, two-inch wafer susceptor pockets, or an alternate susceptor offering the ability to use 2, two-inch and multiple 10x10mm substrates. A showerhead design and rotating susceptor helps ensure well-mixed, uniform precursor delivery. Automated software control gives the ability to grow reproducible samples with timed precursor delivery for making precisely controlled heterostructures.
Thomas Swann 1×3 CCS MOCVD for III-V and Other Semi-Conducting Materials
Metal-Organic Chemical Vapor Deposition of films and nanowires of GaP, InP and their alloys. It has a single 3-inch susceptor pocket. With an expandable precursor bay, this system lends itself to more flexibility in materials and dopant options. Automated software control gives the ability to grow reproducible samples with timed precursor delivery for making precisely controlled heterostructures.
Aixtron PECVD and GRIFter for Carbon Nanotubes and Graphene
The Aixtron PECVD enables the synthesis of carbon nanotubes (single-wall and multi-wall) and graphene films on substrate up to 4″. The machine supports growth both in thermal and plasma-enhanced mode. The graphene induction furnace or GRIFter enables the growth of high-quality graphene monolayers on SiC through high-temperature annealing up to 1700C.
