80+ Plasma Enhanced Chemical Vapor Deposition (PECVD)
The PECVD is a dual frequency plasma-enhanced deposition tool. Materials can be deposited including undoped amorphous silicon, silicon dioxide, and silicon nitride. Deposition temperatures range from O-400 °C. Wafer pieces to 8″ wafers can be accepted.
Oxford FlexAl-Plasma Enhanced Atomic Layer Deposition (ALD)
The FlexAl tool enables the deposition of thin films of a wide variety of materials with single atomic layer thickness control. Gas phase precursors are alternated with water or plasma (oxygen, nitrogen, ammonia) to induce high quality, conformal deposition. Plasma allows room temperature deposition, making processes on sensitive and soft materials possible. The tool can hold 8 precursors simultaneously, making this system ideal for the broad needs of our User base. It can accommodate wafers up to 200 millimeters, and samples as tall as 1 centimeter. Our standard, well developed, processes currently include:
- Hafnium oxide
- Aluminum oxide
- Titanium dioxide
- Silicon dioxide
- Tungsten oxide
- Cobalt oxide
