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Molecular Foundry

HIGHLIGHTSEvaporated tellurium thin films for p-type field-effect transistors and circuits
December 28, 2019

a, Optical image of a typical Te FET and schematic diagram of the device structure. b, Id-Vg transfer curves of the Te transistor (8 nm) in a. Inset,  photograph of wafer-scale (4 inch) Te FETs. A schematic diagram (c), optical image (d) of the 3D inverter based on Te FETs (Te channels 8 nm).

Scientific Achievement

Demonstrated high-performance p-type transistors, computational circuits and monolithic 3D circuits based on Te films processed at low temperature.

Significance and Impact

Realization of the low-temperature processed high-performance devices enables a broad range of applications including flexible/transparent electronics, monolithic 3D circuits or can be implemented into BEOL electronics with existing Si CMOS circuits to further extend/enhance system performance.

Research Details

  • Deposited wafer-scale Te films at cryogenic temperatures on various substrates in.
  • Achieved an effective hole mobility of ~35 cm2 V-1s-1, on/off current ratio of ~104 and subthreshold swing of 108 mVdec-1 on an 8 nm thick Te film.
  • Demonstrated flexible devices, logic gates, computational circuits and monolithic 3D circuits.
C. Zhao , C. Tan , D. Lien, X. Song, M. Amani, M. Hettick, H. Y. Y. Nyein, Z. Yuan, L. Li, M. C. Scott, A. Javey, Nature Nanotechnology 15 53 (2020)

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