Demonstrated high-performance p-type transistors, computational circuits and monolithic 3D circuits based on Te films processed at low temperature.
Significance and Impact
Realization of the low-temperature processed high-performance devices enables a broad range of applications including flexible/transparent electronics, monolithic 3D circuits or can be implemented into BEOL electronics with existing Si CMOS circuits to further extend/enhance system performance.
- Deposited wafer-scale Te films at cryogenic temperatures on various substrates in.
- Achieved an effective hole mobility of ~35 cm2 V-1s-1, on/off current ratio of ~104 and subthreshold swing of 108 mVdec-1 on an 8 nm thick Te film.
- Demonstrated flexible devices, logic gates, computational circuits and monolithic 3D circuits.