Demonstration of reversible writing of high-resolution doping patterns in graphene and MoS2 van der Waals (vdW) heterostructures using a fine electron beam (EB).
Significance and Impact
A simple and mask-free technique that can be used to create nanoscale circuitry in 2D vdW heterostructures for next-generation electronics.
- Developed an EB induced doping technique and realized controllable electron and hole doping in graphene and MoS2 vdW heterostructures with high-carrier-density and high-mobility, even at room temperature.
- Direct writing of high quality p-n junctions and complex nanoscale doping patterns in BN/graphene/BN heterostructures is an erasable and rewritable process.
- Proposed a preliminary model for the energy-dependent EB doping mechanism.