Created twisted h-BN interfaces whose quantum emission (QE) brightness can be fully controlled via twist angle adjustment and externally applied voltages. The emission can also be spatially “seeded” via electron irradiation.
Significance and Impact
Discovered a way to turn QE on/off with an applied voltage in twisted hBN. This is relevant to quantum information technologies, e.g., quantum metrology, networks, and quantum simulation.
- By twisting hBN flakes, bright 4.1-eV color centers can be created around the twist interface.
- By applying a gate voltage, the color centers can be activated/deactivated
- By electron beam irradiation, the color centers can be seeded at pre-determined spatial locations
- GW calculations are applied to identify the active defect type