Created a current-rectifying p-n heterojunction in single CsSnI3 nanowire via a localized phase transition from n-type yellow to p-type black phase and attributed the majority carrier type change to distinctly different formation energies of ionic vacancies in these two phases.
Significance and Impact
A novel approach to heterojunction formation and enables precise control over the design of functional heterostructures using halide perovskite building blocks.
- Identified dominant charge carriers of yellow and black phase CsSnI3 nanowires to be electrons (n-type) and holes (p-type), respectively, through Seebeck coefficient measurements.
- Characterized localized phase transition within single CsSnI3 nanowire using cathodoluminescence microscopy and the formed p-n heterojunction between yellow and black phases exhibiting electrical current rectification.