Molecular Foundry users worked with staff to develop a new growth method, templated liquid phase (TLP) crystal growth, for growing patterned single crystalline III-V’s on amorphous substrates
Significance and Impact
TLP eliminates the need for a lattice-matched growth substrate, allowing for direct growth of high quality single-crystalline semiconductors with user-defined dimensions on any substrate; thus enabling a wide range of new electronic and optoelectronic applications.
- TLP growth carried out by heating patterned group III element capped by evaporated SiOx in the presence of group V gas.
- TLP grown InP films characterized via electron backscatter diffraction spectroscopy (EBSD) to verify single crystallinity
- TLP grown InP transistors show high on/off ratios >105 and field effect mobilities of up to 675 cm2/V s
- Demonstration of InP, GaP, and InSb growth show broad applicability of the TLP growth method to all III-V semiconductors in general