Demonstration of the shortest gate length transistor using a MoS2 channel and ~ 1 nm diameter single-walled carbon nanotube (SWCNT) gate.
Significance and Impact
~ 1 nm gate length transistor possible. Layered materials like MoS2 are potential channel materials at the sub-5-nm transistor scaling limit.
- Near ideal subthreshold swing ~65 mV/decade, On/Off current ratio ~106.
- Effective channel length of ~3.9 nm in Off state and ~1 nm in On state.
- MoS2 extension regions electrostatically doped n+ using Si back gate