Theoretical study of, and method developed to synthesize, h-BN with unconventional stacking structure.
Significance and Impact
h-BN is usually formed in so-called AA’ stacking arrangement of layers. An alternative AB stacking yields a new material with different physical and electronic properties.
- Developed CVD method that exclusively yields Bernal (AB) stacked h-BN.
- Performed theoretical study of all possible stackings of h-BN and compared ground state energies.
- Electronic band structures determined for different stackings.
- Defect structure can be very different for AB vs AA’ h-BN.