Demonstrated control of molecular surface concentration on a graphene field effect transistor with externally applied gate voltage.
Significance and Impact
Enables electrically-controlled molecular doping, gate-tunable control of molecular mechanical configuration, and a new method for determining molecular electronic structure.
- F4TCNQ molecules deposited onto a graphene FET exhibit uniform and reversible field-tunable molecular concentration.
- Surface molecular concentration is changed by simultaneously applying a gate voltage and a source-drain current to single-layer device.
- Gate-tunable mechanical rearrangement of molecules arises from a new dynamical Fermi-level pinning mechanism.