Tuning color centers at a twisted h-BN interface

Scientific Achievement

a–f, Optical images, energy-filtered panchromatic CL intensity map (wavelength window, 280–409 nm) and schematic illustrations of the CL signal in the UV range for stacked hBN flakes with 0° (a–c, respectively) and large-angle (>10°; d–f, respectively) twist.

Created twisted h-BN interfaces whose quantum emission (QE) brightness can be fully controlled via twist angle adjustment and externally applied voltages. The emission can also be spatially “seeded” via electron irradiation.

Significance and Impact

Discovered a way to turn QE on/off with an applied voltage in twisted hBN. This is relevant to quantum information technologies, e.g., quantum metrology, networks, and quantum simulation.

Research Details

By twisting hBN flakes, bright 4.1-eV color centers can be created around the twist interface.
By applying a gate voltage, the color centers can be activated/deactivated
By electron beam irradiation, the color centers can be seeded at pre-determined spatial locations
GW calculations are applied to identify the active defect type

C. Su, F. Zhang, S. Kahn, B. Shevitski, J. Jiang, C. Dai, A. Ungar, J. Park, K. Watanabe, T. Taniguchi, W. Zhang, Z. Tang, J. Kong, F. Wang, M. Crommie, S. G. Louie, S. Aloni, A. Zettl,, Nature Materials (2022). DOI: 10.1038/s41563-022-01303-4

Scientific Achievement

Significance and Impact

Research Details

C. Su, F. Zhang, S. Kahn, B. Shevitski, J. Jiang, C. Dai, A. Ungar, J. Park, K. Watanabe, T. Taniguchi, W. Zhang, Z. Tang, J. Kong, F. Wang, M. Crommie, S. G. Louie, S. Aloni, A. Zettl,, Nature Materials (2022). DOI: 10.1038/s41563-022-01303-4

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